Total: 6
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
pipe
TR,bulk
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
600 V
5A
5A(DC)
2.3 V @ 5 A
0 ns
80 ns
30 µA @ 600 V
2.5 µA @ 600 V
-
110pF @ 1V,1MHz