Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
pipe
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
1500 V
650 V
6A(DC)
6A
1.8 V @ 6 A
150 ns
0 ns
10 µA @ 1500 V
1.1 mA @ 650 V
-
190pF @ 1V,1MHz