Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
bulk
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
50 V
1A
580 mV @ 1 A
-
100 µA @ 40 V
100 µA @ 50 V