Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
Automotive, AEC-Q101
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
30 V
60 V
2A
2A(DC)
600 mV @ 2 A
-
28 ns
200 µA @ 30 V
100 µA @ 60 V
80 µA @ 20 V
70pF @ 1V,1MHz
75pF @ 2V,1MHz