Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
100 V
5A
810 mV @ 5 A
-
200 µA @ 100 V
150pF @ 4V,1MHz