Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
60 V
3A
630 mV @ 3.5 A
-
200 µA @ 60 V
130pF @ 4V,1MHz