Total: 18
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
100 V
80 V
70 V
90 V
5A
800 mV @ 5 A
-
500 µA @ 100 V
500 µA @ 80 V
500 µA @ 90 V
250 µA @ 80 V
250 µA @ 100 V
250 µA @ 90 V
500 µA @ 70 V
400pF @ 4V,1MHz