Total: 22
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TB
CT,TB
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
standard
Schottky barrier
100 V
200 V
150 V
5A
950 mV @ 5 A
-
30 ns
10 µA @ 200 V
10 µA @ 100 V
10 µA @ 150 V
500 µA @ 200 V