Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
350mA(DC)
1 V @ 300 mA
-
10 µA @ 20 V
20pF @ 0V,1MHz