Total: 12
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
40 V
30 V
3A
550 mV @ 3 A
-
1 mA @ 20 V
1 mA @ 40 V
200 µA @ 40 V
100 µA @ 30 V
100 µA @ 40 V
100 µA @ 20 V
300pF @ 4V,1MHz
62pF @ 10V,1MHz