Total: 13
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
bulk
TR
TR,TR
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
standard
SiC Schottky
Level barrier
50 V
15 V
25A
520 mV @ 25 A
-
500 µA @ 50 V
1.2 mA @ 15 V
2000pF @ 5V,1MHz