Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
SBR®
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
Level barrier
40 V
30 V
1A
460 mV @ 1 A
-
50 µA @ 30 V
63 µA @ 40 V