Total: 16
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
Automotive, AEC-Q101
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
50 V
30 V
45 V
10A(DC)
10A
470 mV @ 10 A
-
1 mA @ 30 V
300 µA @ 45 V
280 µA @ 45 V
150 µA @ 50 V
530pF @ 10V,1MHz