Total: 11
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
Automotive, AEC-Q101
TrenchSBR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Schottky barrier
Level barrier
40 V
30 V
25 V
3A
490 mV @ 3 A
-
16 ns
75 µA @ 40 V
500 µA @ 40 V
100 µA @ 30 V
20 µA @ 40 V
180 µA @ 40 V
90 µA @ 25 V
100pF @ 30V,1MHz
82pF @ 10V,1MHz