Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
40 V
2A
530 mV @ 2 A
-
150 µA @ 40 V
80 µA @ 20 V
70pF @ 5V,1MHz
85pF @ 5V,1MHz