Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
2A
420 mV @ 2 A
-
1 mA @ 30 V
76pF @ 10V,1MHz