Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
350mA(DC)
810 mV @ 350 mA
1.6 ns
12 µA @ 30 V
6pF @ 25V,1MHz