Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
TR,bulk
CoolSiC™+
On sale
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
1000 V
650 V
3A
3A(DC)
1.8 V @ 3 A
85 ns
0 ns
10 µA @ 1000 V
500 µA @ 650 V
25pF @ 4V,1MHz
100pF @ 1V,1MHz