Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
SBR®
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Level barrier
45 V
12A
500 mV @ 12 A
-
300 µA @ 45 V