Total: 8
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
50 V
30 V
60 V
1A
650 mV @ 1 A
-
100 µA @ 60 V
200 µA @ 60 V
100 µA @ 50 V
300 µA @ 30 V
45pF @ 4V,1MHz
15pF @ 5V,1MHz