Total: 8
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
TB
Automotive, AEC-Q101
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
Level barrier
40 V
30 V
60 V
1A
570 mV @ 1 A
-
15 ns
200 µA @ 30 V
50 µA @ 60 V
25 µA @ 40 V
95pF @ 1V,1MHz
130pF @ 0V,1MHz