Total: 3
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
SBR®
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Level barrier
FERD(Field effect rectifier device diode)
50 V
30 V
15A
490 mV @ 15 A
-
500 µA @ 30 V
300 µA @ 30 V
650 µA @ 50 V
400pF @ 30V,1MHz