Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
SBR®
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Level barrier
50 V
20A
520 mV @ 20 A
57 ns
500 µA @ 50 V
400pF @ 40V,1MHz