Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
50 V
60 V
3A
720 mV @ 3 A
-
1 mA @ 60 V
1 mA @ 50 V
300pF @ 4V,1MHz