Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
30 V
9A
480 mV @ 9 A
-
800 µA @ 40 V
800 µA @ 30 V
900pF @ 4V,1MHz