Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Through-Hole
bulk
TR,CT
TB
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
30 V
45 V
9A
570 mV @ 18 A
-
800 µA @ 40 V
800 µA @ 30 V
800 µA @ 45 V
900pF @ 4V,1MHz