Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
SBR®
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Level barrier
30 V
1A
480 mV @ 1 A
-
75 µA @ 30 V
80pF @ 4V,1MHz