Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
TrenchSBR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
Level barrier
60 V
45 V
4A
520 mV @ 4 A
-
150 µA @ 60 V
100 µA @ 45 V
180pF @ 5V,1MHz