Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
750mA
650 mV @ 1.5 A
10 ns
100 µA @ 30 V
175pF @ 0V,1MHz