Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
TrenchSBR
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Level barrier
30 V
4A
510 mV @ 4 A
30 ns
60 µA @ 30 V
150pF @ 30V,1MHz