Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
350mA(DC)
750 mV @ 200 mA
-
10 ns
25 µA @ 40 V
20pF @ 0V,1MHz
30pF @ 0V,1MHz