Total: 7
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
bulk,pipe
CT,TB
TURBOSWITCH™
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
1200 V
800 V
2A
2A(DC)
11.8A(DC)
1.65 V @ 2 A
-
75 ns
0 ns
115 ns
5 µA @ 800 V
20 µA @ 1200 V
18 µA @ 1200 V
182pF @ 1V,1MHz