Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
80 V
500mA(DC)
420 mV @ 100 mA
-
200 µA @ 80 V
120pF @ 0V,1MHz