Total: 5
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR,CT
pipe
TR,bulk
bulk,pipe
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
600 V
650 V
4A
4A(DC)
1.7 V @ 4 A
50 ns
0 ns
3 µA @ 600 V
140 µA @ 650 V
70 µA @ 650 V
-
130pF @ 1V,1MHz