Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
500mA
350 mV @ 100 mA
-
30 µA @ 10 V
42pF @ 0V,1MHz