Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
1.5A
550 mV @ 1.5 A
-
200 µA @ 40 V
60 µA @ 40 V
35pF @ 10V,1MHz
170pF @ 0V,1MHz