Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
pipe
TR,bulk
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
1200 V
400 V
650 V
2A
2A(DC)
1.8 V @ 2 A
35 ns
0 ns
10 µA @ 400 V
330 µA @ 650 V
48 µA @ 1200 V
-
70pF @ 1V,1MHz
125pF @ 1V,1MHz