Total: 8
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
bulk
TR
TR,CT
pipe
TR,CT,bulk
TR,bulk
CoolSiC™+
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
No recovery time > 500mA(Io)
standard
SiC Schottky
1200 V
400 V
650 V
5A(DC)
19.1A(DC)
1.8 V @ 5 A
-
35 ns
0 ns
10 µA @ 400 V
120 µA @ 1200 V
33 µA @ 1200 V
830 µA @ 650 V
301pF @ 1V,1MHz
250pF @ 1V,1MHz
160pF @ 1V,1MHz