Total: 47
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
20 V
40 V
30 V
60 V
1A
1.5A
500mA
2A
3A
700mA
3A(DC)
450 mV @ 1 A
550 mV @ 1 A
450 mV @ 700 mA
700 mV @ 1 A
520 mV @ 3 A
480 mV @ 2 A
450 mV @ 500 mA
470 mV @ 1 A
460 mV @ 1.5 A
580 mV @ 1 A
450 mV @ 2 A
600 mV @ 2 A
550 mV @ 3 A
360 mV @ 1 A
490 mV @ 2 A
490 mV @ 3 A
670 mV @ 1 A
390 mV @ 1 A
550 mV @ 1.5 A
370 mV @ 3 A
810 mV @ 500 mA
390 mV @ 700 mA
400 mV @ 1.5 A
490 mV @ 700 mA
520 mV @ 2 A
490 mV @ 1.5 A
580 mV @ 2 A
580 mV @ 3 A
520 mV @ 700 mA
580 mV @ 700 mA
370 mV @ 700 mA
-
1 mA @ 20 V
200 µA @ 30 V
200 µA @ 40 V
60 µA @ 30 V
50 µA @ 30 V
500 µA @ 40 V
100 µA @ 30 V
20 µA @ 40 V
100 µA @ 40 V
500 µA @ 30 V
100 µA @ 60 V
200 µA @ 60 V
50 µA @ 60 V
1.5 mA @ 30 V
15 µA @ 40 V
60 µA @ 40 V
300 µA @ 60 V
30 µA @ 20 V
90pF @ 10V,1MHz
35pF @ 10V,1MHz
70pF @ 10V,1MHz
170pF @ 0V,1MHz
45pF @ 10V,1MHz
40pF @ 10V,1MHz
38pF @ 10V,1MHz
28pF @ 0V,1MHz
50pF @ 10V,1MHz
74pF @ 0V,1MHz
82pF @ 10V,1MHz
62pF @ 10V,1MHz
102pF @ 10V,1MHz