Total: 58
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
-
Surface mount
Base installation
Terminal installation
pallet
On sale
Final sale
stop production
Not applicable to new design
Rapid recovery=< 500ns,> 200mA(Io)
Standard recovery>500ns,> 200mA(Io)
standard
Schottky barrier
1200 V
40 V
200 V
400 V
600 V
1000 V
800 V
60 V
45 V
2000 V
1400 V
1600 V
4000 V
1800 V
4500 V
2200 V
2600 V
4400 V
6800 V
4200 V
2A
60A
150A
125A
5140A
735A
10450A
11140A
700A
15130A
350A
1560A
4450A
950A
89A
104A
171A
1030A
2520A
2200A
1100A
4870A
1720A
2160A
255A
6400A
261A
260A
400A
500 mV @ 2 A
630 mV @ 2 A
1.1 V @ 200 A
1.2 V @ 200 A
600 mV @ 60 A
960 mV @ 4500 A
1.4 V @ 2200 A
980 mV @ 6000 A
940 mV @ 8000 A
890 mV @ 8000 A
4.3 V @ 2500 A
2 V @ 2500 A
1.11 V @ 3000 A
1.8 V @ 2500 A
1.15 V @ 10000 A
1.11 V @ 1000 A
1.26 V @ 500 A
1.32 V @ 800 A
200 µA @ 60 V
400 µA @ 40 V
50 µA @ 200 V
50 µA @ 400 V
2 mA @ 45 V
50 µA @ 1200 V
40 mA @ 1800 V
50 mA @ 600 V
40 mA @ 600 V
40 mA @ 1400 V
60 mA @ 600 V
50 mA @ 4000 V
100 mA @ 600 V
30 mA @ 1200 V
150 mA @ 4500 V
25 mA @ 4500 V
20 mA @ 1200 V
40 mA @ 2200 V
20 mA @ 1600 V
20 mA @ 1800 V
20 mA @ 1400 V
30 mA @ 1600 V
40 mA @ 2600 V
75 mA @ 2200 V
150 mA @ 2000 V
150 mA @ 2200 V
100 mA @ 4400 V
80 mA @ 2200 V
50 mA @ 6800 V
100 mA @ 4200 V
150 mA @ 9000 V
200 mA @ 4500 V
30 mA @ 1400 V
30 mA @ 1800 V
40 mA @ 2000 V
20 mA @ 800 V
30 mA @ 800 V
200 mA @ 1400 V
200 mA @ 1000 V