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Diode rectifier

Total: 6

FFSB0665B
Brand：ON
Stock：57271
Store: ShenZhen/Hongkong
Description：650V 6A SIC SBD GEN1.5
Offer
Price：1+
￥2.57
MBR8170TFSTWG
Brand：ON
Stock：34056
Store: ShenZhen/Hongkong
Description：170V 8A SCHOTTKY
Offer
Price：1+
￥0.77
MBR8170TFSTXG
Brand：ON
Stock：12982
Store: ShenZhen/Hongkong
Description：170V 8A SCHOTTKY
Offer
Price：1+
￥0.77
MBR8170TFSTAG
Brand：ON
Stock：68303
Store: ShenZhen/Hongkong
Description：170V 8A SCHOTTKY
Offer
Price：1+
￥0.77
MBR8170TFSTBG
Brand：ON
Stock：47315
Store: ShenZhen/Hongkong
Description：170V 8A SCHOTTKY
Offer
Price：1+
￥0.77
FFSP08120A
Brand：ON
Stock：62272
Store: ShenZhen/Hongkong
Description：DIODE SCHOTTKY 1.2KV 8A TO220-2
Offer
Price：1+
￥8.24
Brand

ON

Microchip

ST

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

Through-Hole

packing

TR

TR,CT

pipe

series
Part status

On sale

Speed

Rapid recovery=< 500ns,> 200mA(Io)

No recovery time > 500mA(Io)

Diode type

Schottky barrier

SiC Schottky

Voltage DC reverse (Vr) (maximum)

1200 V

650 V

170 V

Current average rectification (Io)

8A(DC)

Voltage at different If - forward (Vf)

1.75 V @ 8 A

1.7 V @ 6 A

890 mV @ 8 A

Reverse recovery time (trr)

-

Current - reverse leakage at different Vr

40 µA @ 650 V

200 µA @ 1200 V

30 µA @ 170 V

Capacitance at different Vr and F

538pF @ 1V,100kHz

259pF @ 1V,100kHz

237pF @ 1V,1MHz

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