15 ns510 mV @ 1 A Level barrier-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Diode rectifier

Total: 1

Price：1+

￥0.67

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Installation type

Surface mount

packing

TR,CT

series

SBR®

Part status

On sale

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

Level barrier

Voltage DC reverse (Vr) (maximum)

40 V

Current average rectification (Io)

Voltage at different If - forward (Vf)

510 mV @ 1 A

Reverse recovery time (trr)

15 ns

Current - reverse leakage at different Vr

500 µA @ 40 V

Capacitance at different Vr and F

30pF @ 10V,1MHz

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