Total: 2
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
Level barrier
30 V
1A
500mA(DC)
435 mV @ 500 mA
570 mV @ 1 A
15 ns
200 µA @ 30 V
75 µA @ 30 V
30pF @ 1V,1MHz
95pF @ 1V,1MHz