TRThrough-Hole Rapid recovery=< 500ns,> 200mA(Io)100 ns-Diode rectifier[Parameters, quotations, pictures, datasheet]-ICQQG

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Diode rectifier

Total: 4

MUR480ERL

Brand：ON

Stock：78159

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 800V 4A AXIAL

MUR2100ERL

Brand：ON

Stock：20558

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 1KV 2A AXIAL

MUR1100ERL

Brand：ON

Stock：74574

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 1KV 1A AXIAL

MUR4100ERL

Brand：ON

Stock：65384

Store: ShenZhen/Hongkong

Description：DIODE GEN PURP 1KV 4A DO201AD

Brand

Microchip

Infineon

NXP

Diodes

Toshiba

Installation type

Through-Hole

packing

series

SWITCHMODE™

Part status

stop production

Speed

Rapid recovery=< 500ns,> 200mA(Io)

Diode type

standard

Voltage DC reverse (Vr) (maximum)

1000 V

800 V

Current average rectification (Io)

Voltage at different If - forward (Vf)

2.2 V @ 2 A

1.75 V @ 1 A

1.85 V @ 4 A

Reverse recovery time (trr)

100 ns

Current - reverse leakage at different Vr

10 µA @ 1000 V

25 µA @ 800 V

25 µA @ 1000 V

Capacitance at different Vr and F

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