Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
Final sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
30 V
5A
540 mV @ 5 A
15.72 ns
100 µA @ 30 V
159pF @ 10V,1MHz