Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
100 V
10A
670 mV @ 10 A
22.94 ns
60 µA @ 100 V
796pF @ 4V,1MHz