Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
On sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
100 V
12A
670 mV @ 12 A
27.33 ns
100 µA @ 100 V
1124pF @ 4V,1MHz