Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
60 V
3A
650 mV @ 3 A
10.62 ns
100 µA @ 60 V
-