Total: 1
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
TR,CT
Final sale
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
2A
500 mV @ 2 A
9.65 ns
100 µA @ 40 V
98pF @ 4V,1MHz