Total: 4
ON
Microchip
ST
Infineon
NXP
Diodes
Toshiba
Surface mount
Through-Hole
TR
TR,CT
On sale
stop production
Rapid recovery=< 500ns,> 200mA(Io)
Schottky barrier
40 V
50 V
380mA(DC)
15mA(DC)
1 V @ 275 mA
900 mV @ 15 mA
950 mV @ 15 mA
1 ns
200 nA @ 30 V
4 µA @ 30 V
200 nA @ 40 V
2.2pF @ 0V,1MHz
6pF @ 30V,1MHz
2.1pF @ 0V,1MHz